JPH026229B2 - - Google Patents

Info

Publication number
JPH026229B2
JPH026229B2 JP58228042A JP22804283A JPH026229B2 JP H026229 B2 JPH026229 B2 JP H026229B2 JP 58228042 A JP58228042 A JP 58228042A JP 22804283 A JP22804283 A JP 22804283A JP H026229 B2 JPH026229 B2 JP H026229B2
Authority
JP
Japan
Prior art keywords
type
layer
base layer
region
type base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58228042A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60119776A (ja
Inventor
Toshihiro Nakajima
Yoshiaki Hisamoto
Kozo Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58228042A priority Critical patent/JPS60119776A/ja
Priority to US06/662,080 priority patent/US4609933A/en
Priority to DE19843439803 priority patent/DE3439803A1/de
Publication of JPS60119776A publication Critical patent/JPS60119776A/ja
Publication of JPH026229B2 publication Critical patent/JPH026229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP58228042A 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ Granted JPS60119776A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58228042A JPS60119776A (ja) 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ
US06/662,080 US4609933A (en) 1983-11-30 1984-10-18 Gate turn-off thyristor having P+ gate and emitter
DE19843439803 DE3439803A1 (de) 1983-11-30 1984-10-31 Abschaltthyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58228042A JPS60119776A (ja) 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS60119776A JPS60119776A (ja) 1985-06-27
JPH026229B2 true JPH026229B2 (en]) 1990-02-08

Family

ID=16870285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58228042A Granted JPS60119776A (ja) 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ

Country Status (3)

Country Link
US (1) US4609933A (en])
JP (1) JPS60119776A (en])
DE (1) DE3439803A1 (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214471A (ja) * 1985-03-19 1986-09-24 Res Dev Corp Of Japan ゲ−ト制御半導体装置
JPH0691245B2 (ja) * 1985-06-26 1994-11-14 株式会社日立製作所 ゲ−トタ−ンオフサイリスタ
DE68923056T2 (de) * 1988-10-04 1995-11-30 Toshiba Kawasaki Kk Halbleiteranordnung mit kurzgeschlossener Anode und Verfahren zu deren Herstellung.
JP4748149B2 (ja) * 2007-12-24 2011-08-17 株式会社デンソー 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH594989A5 (en]) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear
JPS607394B2 (ja) * 1978-08-18 1985-02-23 株式会社明電舎 半導体制御素子
JPS6043032B2 (ja) * 1978-09-14 1985-09-26 株式会社日立製作所 ゲートターンオフサイリスタ
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
JPS55110068A (en) * 1979-02-16 1980-08-25 Fujitsu Ltd Thyristor
JPS574101A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Moisture sensitive element
JPS5773956A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Glass coated semiconductor device
JPS5778172A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Gate turn-off thyristor

Also Published As

Publication number Publication date
DE3439803C2 (en]) 1990-07-26
JPS60119776A (ja) 1985-06-27
DE3439803A1 (de) 1985-06-05
US4609933A (en) 1986-09-02

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